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PD - 9.1672A
IRFZ34E
HEXFET ? Power MOSFET
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
D
V DSS = 60V
l
l
175°C Operating Temperature
Fast Switching
G
R DS(on) = 0.042 ?
l Ease of Paralleling
Description
Fifth Generation HEXFETs from International Rectifier
S
I D = 28A
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
TO-220AB
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
28
I D @ T C = 100°C
Continuous Drain Current, V GS @ 10V
20
A
I DM
Pulsed Drain Current ?
112
P D @T C = 25°C
Power Dissipation
68
W
Linear Derating Factor
0.46
W/°C
V GS
Gate-to-Source Voltage
± 20
V
E AS
Single Pulse Avalanche Energy ?
97
mJ
I AR
Avalanche Current ?
17
A
E AR
Repetitive Avalanche Energy ?
6.8
mJ
dv/dt
Peak Diode Recovery dv/dt ?
5.0
V/ns
T J
Operating Junction and
-55 to + 175
T STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
300 (1.6mm from case )
10 lbf?in (1.1N?m)
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
R θ JC
Junction-to-Case
––––
––––
2.2
R θ CS
Case-to-Sink, Flat, Greased Surface
––––
0.50
––––
°C/W
R θ JA
Junction-to-Ambient
––––
––––
62
11/4/97
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